发明授权
- 专利标题： Semiconductor process
- 专利标题（中）： 半导体工艺
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申请号： US14656733申请日： 2015-03-13
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公开(公告)号： US09443726B1公开(公告)日： 2016-09-13
- 发明人: Kun-Ju Li , Po-Cheng Huang , Yu-Ting Li , Jen-Chieh Lin , Chih-Hsun Lin , Tzu-Hsiang Hung , Wu-Sian Sie , I-Lun Hung , Wen-Chin Lin , Chun-Tsen Lu
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/324 ; H01L21/321 ; H01L21/66
摘要：
A semiconductor process includes the following steps. A dielectric layer is formed on a substrate, where the dielectric layer has at least a dishing from a first top surface. A shrinkable layer is formed to cover the dielectric layer, where the shrinkable layer has a second top surface. A treatment process is performed to shrink a part of the shrinkable layer according to a topography of the second top surface, thereby flattening the second top surface.
公开/授权文献
- US20160268125A1 SEMICONDUCTOR PROCESS 公开/授权日：2016-09-15
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