Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14940120Application Date: 2015-11-12
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Publication No.: US09443757B1Publication Date: 2016-09-13
- Inventor: Ming-Yueh Tsai , Jia-Feng Fang , Yi-Wei Chen , Jing-Yin Jhang , Rung-Yuan Lee , Chen-Yi Weng , Wei-Jen Wu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW104132947A 20151007
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/768 ; H01L29/161 ; H01L29/16 ; H01L29/165 ; H01L29/08 ; H01L23/535 ; H01L29/66
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.
Information query
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