Invention Grant
- Patent Title: Integrated circuit device
- Patent Title (中): 集成电路器件
-
Application No.: US14926851Application Date: 2015-10-29
-
Publication No.: US09443842B2Publication Date: 2016-09-13
- Inventor: Sheng-Yuan Lee , Yin-Ku Chang
- Applicant: VIA TECHNOLOGIES, INC.
- Applicant Address: TW New Taipei
- Assignee: VIA TECHNOLOGIES, INC.
- Current Assignee: VIA TECHNOLOGIES, INC.
- Current Assignee Address: TW New Taipei
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW104117729A 20150602
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/07 ; H01L49/02 ; H01L23/528 ; H01L27/06 ; H01L29/93 ; H01L29/94 ; H01L23/522 ; H01L27/08

Abstract:
The invention provides an integrated circuit device. The integrated circuit device includes a substrate. A first capacitor is disposed on the substrate. A first metal pattern is coupled to a first electrode of the first capacitor. A second metal pattern is coupled to a first electrode of the second capacitor. A third metal pattern is disposed over the first and second metal patterns. The third metal pattern covers the first capacitor, the first metal pattern, and the second metal pattern. The third metal pattern is electrically grounded. An inductor is disposed over the third metal pattern.
Public/Granted literature
- US20160148929A1 INTEGRATED CIRCUIT DEVICE Public/Granted day:2016-05-26
Information query
IPC分类: