Invention Grant
US09443843B2 Integrated circuit device 有权
集成电路器件

Integrated circuit device
Abstract:
The invention provides an integrated circuit device. The integrated circuit device includes a substrate. A first capacitor is disposed on the substrate. A first metal pattern is coupled to a first electrode of the first capacitor. A second metal pattern is coupled to a first electrode of the second capacitor. A third metal pattern is disposed over the first and second metal patterns. The third metal pattern covers the first capacitor, the first metal pattern and the second metal pattern. The third metal pattern is electrically grounding. An inductor is disposed over the third metal pattern.
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