Invention Grant
US09444224B2 Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
有权
氮化物激光二极管在n包层中具有非均匀合金组成
- Patent Title: Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
- Patent Title (中): 氮化物激光二极管在n包层中具有非均匀合金组成
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Application No.: US14563847Application Date: 2014-12-08
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Publication No.: US09444224B2Publication Date: 2016-09-13
- Inventor: Christopher L. Chua , Thomas Wunderer , Zhihong Yang
- Applicant: PALO ALTO RESEARCH CENTER INCORPORATED
- Applicant Address: US CA Palo Alto
- Assignee: PALO ALTO RESEARCH CENTER INCORPORATED
- Current Assignee: PALO ALTO RESEARCH CENTER INCORPORATED
- Current Assignee Address: US CA Palo Alto
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01S5/30
- IPC: H01S5/30 ; H01S5/32 ; H01S5/323 ; H01S5/343 ; H01S5/20

Abstract:
An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described.
Public/Granted literature
- US20160164260A1 Nitride Laser Diode with Engineered Non-Uniform Alloy Composition in the N-Cladding Layer Public/Granted day:2016-06-09
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