The present invention provides a chemical vapor deposition raw material, which has a low melting point, has heat stability such that no thermal decomposition occurs during vaporization, readily decomposes at low temperature during film-formation, and can stably form a nickel thin-film having fewer impurities. The present invention relates to a chemical vapor deposition raw material containing an organic nickel compound, in which a cyclopentadienyl group or a derivative thereof is coordinated to nickel, and a cycloalkenyl group having one allyl group or a derivative thereof is coordinated to the carbon skeleton of cycloalkyl. This raw material has a low melting point, proper heat stability and film-formation ability at low temperature. Further, due to a high vapor pressure, the raw material is suitable for a three-dimensional electrode material having a three-dimensional structure.