Invention Grant
US09448482B2 Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device
有权
图案形成方法，通过该方法形成的抗蚀图案，使用该方法的电子器件的制造方法和电子器件
- Patent Title: Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device
- Patent Title (中): 图案形成方法，通过该方法形成的抗蚀图案，使用该方法的电子器件的制造方法和电子器件
-
Application No.: US14719830Application Date: 2015-05-22
-
Publication No.: US09448482B2Publication Date: 2016-09-20
- Inventor: Kaoru Iwato , Takanobu Takeda , Hiroo Takizawa
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-257845 20121126
- Main IPC: G03F7/075
- IPC: G03F7/075 ; G03F7/30 ; G03F7/11 ; H01L21/027 ; H01L21/033 ; H01L21/306 ; G03F7/40 ; G03F7/039 ; G03F7/32
Abstract:
There is provided a pattern forming method including (1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased, (2) exposing the film, (3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing, (4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern, and (5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid.
Public/Granted literature
Information query
IPC分类:
