Invention Grant
- Patent Title: Method for preparing a lead-free piezoelectric thin film
- Patent Title (中): 无铅压电薄膜的制备方法
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Application No.: US14603265Application Date: 2015-01-22
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Publication No.: US09450175B2Publication Date: 2016-09-20
- Inventor: Phoi Chin Goh , Kui Yao
- Applicant: Agency for Science, Technology and Research
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L41/318
- IPC: H01L41/318 ; H01L41/08 ; C04B35/634 ; C01G33/00 ; C04B35/495 ; C04B35/626 ; C04B35/632 ; H01L41/187
Abstract:
The present invention discloses a method of preparing a lead-free piezoelectric thin film comprising the steps of: providing a precursor solution comprising at least one alkali metal ion, a polyamino carboxylic acid, and an amine; depositing the precursor solution on a substrate to form a film; and annealing the film. The present invention also provides a lead-free piezoelectric thin film prepared according to the method, a precursor solution for use in the method and a method of preparing the precursor solution.
Public/Granted literature
- US20150132475A1 METHOD FOR PREPARING A LEAD-FREE PIEZOELECTRIC THIN FILM Public/Granted day:2015-05-14
Information query
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