发明授权
- 专利标题： Rectifying device, transistor, and rectifying method
- 专利标题（中）： 整流装置，晶体管和整流方法
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申请号： US14240219申请日： 2012-08-21
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公开(公告)号： US09450176B2公开(公告)日： 2016-09-20
- 发明人: Makoto Kohda , Junsaku Nitta , Kensuke Kobayashi
- 申请人： Makoto Kohda , Junsaku Nitta , Kensuke Kobayashi
- 申请人地址： JP Saitama
- 专利权人： Japan Science and Technology Agency
- 当前专利权人： Japan Science and Technology Agency
- 当前专利权人地址： JP Saitama
- 代理机构： Michael Best & Friedrich LLP
- 优先权： JP2011-180767 20110822
- 国际申请： PCT/JP2012/071025 WO 20120821
- 国际公布： WO2013/027712 WO 20130228
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L43/06 ; B82Y10/00 ; H01L29/66 ; H01L29/82 ; H01L27/22 ; H01F10/00 ; H01L43/08 ; H01L43/10 ; H01L29/12 ; H01L29/423 ; H01L29/775 ; H01L29/861 ; H01L29/205 ; H01L29/778
摘要：
A rectifying device includes: a one-dimensional channel (18) formed with a semiconductor, electrons traveling through the one-dimensional channel; an electrode (26) that applies an effective magnetic field generated from a spin orbit interaction to the electrons traveling through the one-dimensional channel by applying an electric field to the one-dimensional channel, the effective magnetic field being in a direction intersectional to the direction in which the electrons are traveling; and an external magnetic field generating unit (38) that generates an external magnetic field in the one-dimensional channel.
公开/授权文献
- US20140166985A1 RECTIFYING DEVICE, TRANSISTOR, AND RECTIFYING METHOD 公开/授权日：2014-06-19
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