Invention Grant
US09455349B2 Oxide semiconductor thin film transistor with reduced impurity diffusion
有权
具有减少杂质扩散的氧化物半导体薄膜晶体管
- Patent Title: Oxide semiconductor thin film transistor with reduced impurity diffusion
- Patent Title (中): 具有减少杂质扩散的氧化物半导体薄膜晶体管
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Application No.: US14518259Application Date: 2014-10-20
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Publication No.: US09455349B2Publication Date: 2016-09-27
- Inventor: Hideomi Suzawa , Tetsuhiro Tanaka , Yuhei Sato , Sachiaki Tezuka , Shunpei Yamazaki
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-219459 20131022
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/423 ; H01L27/12
Abstract:
A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.
Public/Granted literature
- US20150108472A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-04-23
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