公开(公告)号：US12148835B2

公开(公告)日：2024-11-19

申请号：US18211652

申请日：2023-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Hirokazu Watanabe ,  Yuhei Sato ,  Yasumasa Yamane ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US10923600B2

公开(公告)日：2021-02-16

申请号：US16044600

申请日：2018-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Akihisa Shimomura ,  Yuji Egi ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US10553690B2

公开(公告)日：2020-02-04

申请号：US15220498

申请日：2016-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Kazuki Tanemura ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L29/40 ,  H01L49/02 ,  H01L27/06

Abstract: A miniaturized transistor with reduced parasitic capacitance and highly stable electrical characteristics is provided. High performance and high reliability of a semiconductor device including the transistor is achieved. A first conductor is formed over a substrate, a first insulator is formed over the first conductor, a layer that retains fixed charges is formed over the first insulator, a second insulator is formed over the layer that retains fixed charges, and a transistor is formed over the second insulator. Threshold voltage Vth is controlled by appropriate adjustment of the thicknesses of the first insulator, the second insulator, and the layer that retains fixed charges.

公开(公告)号：US10276724B2

公开(公告)日：2019-04-30

申请号：US15204015

申请日：2016-07-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka Okazaki ,  Akihisa Shimomura ,  Naoto Yamade ,  Tomoya Takeshita ,  Tetsuhiro Tanaka

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

公开(公告)号：US10249766B2

公开(公告)日：2019-04-02

申请号：US15138539

申请日：2016-04-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka

IPC: H01L29/78 ,  H01L23/532 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

Abstract: In a semiconductor device including a transistor, an oxygen release type oxide insulating film is formed in contact with a channel formation region of the transistor. The channel formation region is formed in an oxide semiconductor film. Oxygen is supplied from the oxide insulating film to the oxide semiconductor film. Further, an oxygen barrier film which penetrates the oxide insulating film is formed around the channel formation region, whereby a diffusion of oxygen to the wiring, the electrode, and the like connected to the transistor can be suppressed.

公开(公告)号：US10236389B2

公开(公告)日：2019-03-19

申请号：US15900845

申请日：2018-02-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Hideomi Suzawa ,  Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshiya Endo ,  Mitsuhiro Ichijo

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8258 ,  H01L29/423 ,  H01L29/49 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12

Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.

公开(公告)号：US09893192B2

公开(公告)日：2018-02-13

申请号：US14258553

申请日：2014-04-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Kazuya Hanaoka

IPC: H01L29/45 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L29/78618 ,  H01L29/41733 ,  H01L29/7869

Abstract: To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device formed using an oxide semiconductor and having favorable electrical characteristics. A semiconductor device includes an island-shaped semiconductor layer over an insulating surface; a pair of electrodes in contact with a side surface of the semiconductor layer and overlapping with a part of a top surface of the semiconductor layer; an oxide layer located between the semiconductor layer and the electrode and in contact with a part of the top surface of the semiconductor layer and a part of a bottom surface of the electrode; a gate electrode overlapping with the semiconductor layer; and a gate insulating layer between the semiconductor layer and the gate electrode. In addition, the semiconductor layer includes an oxide semiconductor, and the pair of electrodes includes Al, Cr, Cu, Ta, Ti, Mo, or W.

公开(公告)号：US09887295B2

公开(公告)日：2018-02-06

申请号：US15270064

申请日：2016-09-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yuhei Sato ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78648 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/41733 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.

公开(公告)号：US09812467B2

公开(公告)日：2017-11-07

申请号：US15041338

申请日：2016-02-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Tetsuhiro Tanaka

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/04 ,  H01L29/26 ,  H01L29/78

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/26 ,  H01L29/78 ,  H01L29/7869

Abstract: A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for metal films of a source electrode layer, a drain electrode layer, and a gate electrode layer, whereby diffusion of oxygen to the metal films is suppressed.

公开(公告)号：US09698277B2

公开(公告)日：2017-07-04

申请号：US14963945

申请日：2015-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Ryo Tokumaru ,  Yuhei Sato ,  Kazuhiro Tsutsui

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.