Invention Grant
US09461094B2 Switching film structure for magnetic random access memory (MRAM) cell
有权
磁性随机存取存储器（MRAM）单元的切换膜结构
- Patent Title: Switching film structure for magnetic random access memory (MRAM) cell
- Patent Title (中): 磁性随机存取存储器（MRAM）单元的切换膜结构
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Application No.: US14334554Application Date: 2014-07-17
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Publication No.: US09461094B2Publication Date: 2016-10-04
- Inventor: Xia Li , Wei-Chuan Chen , Yu Lu , Kangho Lee , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/22 ; H01L43/08 ; G11C11/16
Abstract:
An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.
Public/Granted literature
- US20160020250A1 SWITCHING FILM STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL Public/Granted day:2016-01-21
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