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US09461094B2 Switching film structure for magnetic random access memory (MRAM) cell 有权
磁性随机存取存储器(MRAM)单元的切换膜结构

Switching film structure for magnetic random access memory (MRAM) cell
Abstract:
An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.
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