Invention Grant
- Patent Title: Memory device and method of fabricating thereof
- Patent Title (中): 存储器件及其制造方法
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Application No.: US14207035Application Date: 2014-03-12
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Publication No.: US09461136B2Publication Date: 2016-10-04
- Inventor: Giulio Albini , Paola Bacciaglia
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/49 ; H01L29/423 ; H01L21/28 ; H01L27/105 ; H01L29/66 ; H01L29/792
Abstract:
Subject matter disclosed herein relates to a process flow to form a gate structure of a memory device.
Public/Granted literature
- US20140191307A1 MEMORY DEVICE AND METHOD OF FABRICATING THEREOF Public/Granted day:2014-07-10
Information query
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