Invention Grant
- Patent Title: OPC enlarged dummy electrode to eliminate ski slope at eSiGe
- Patent Title (中): OPC放大虚拟电极，以消除eSiGe的滑坡
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Application No.: US14503810Application Date: 2014-10-01
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Publication No.: US09461145B2Publication Date: 2016-10-04
- Inventor: Ran Yan , Jan Hoentschel , Martin Gerhardt
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; G03F1/36 ; H01L29/66 ; H01L21/762 ; H01L29/165 ; H01L29/08 ; H01L21/02 ; H01L29/06 ; H01L29/78 ; H01L29/49 ; G03F1/72 ; H01L21/033
Abstract:
Enlarging the dummy electrode to the STI top width size by OPC cut mask correction and the resulting device are disclosed. Embodiments include forming an STI region in a silicon substrate, the STI region having a top width; and forming a dummy electrode on the STI region and a gate electrode on the silicon substrate, the dummy electrode having a width greater than or equal to the STI region top width.
Public/Granted literature
- US20160099336A1 OPC ENLARGED DUMMY ELECTRODE TO ELIMINATE SKI SLOPE AT ESIGE Public/Granted day:2016-04-07
Information query
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