Invention Grant
- Patent Title: Light emitting diode dielectric mirror
- Patent Title (中): 发光二极管电介质镜
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Application No.: US13909927Application Date: 2013-06-04
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Publication No.: US09461201B2Publication Date: 2016-10-04
- Inventor: Sten Heikman , James Ibbetson
- Applicant: CREE, INC.
- Applicant Address: US NC Durham
- Assignee: CREE, INC.
- Current Assignee: CREE, INC.
- Current Assignee Address: US NC Durham
- Agency: Koppel, Patrick, Heybl & Philpott
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/10 ; H01L33/32 ; H01L33/46 ; H01L33/38 ; H01L33/40

Abstract:
A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first reflective layer can be provided adjacent to one of the oppositely doped layers, with the first layer comprising a material with a different index of refraction than the active LED structure. The difference in IR between the active LED structure and the first reflective layer increases TIR of light at the junction. In some embodiments the first reflective layer can comprise an IR lower than the semiconductor material, increasing the amount of light that can experience TIR. Some embodiments of LED chips according to the present invention can also comprise a second reflective layer or metal layer on and used in conjunction with the first reflective layer such that light passing through the first reflective layer can be reflected by the second reflective layer.
Public/Granted literature
- US20130341634A1 LIGHT EMITTING DIODE DIELECTRIC MIRROR Public/Granted day:2013-12-26
Information query
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