发明授权
- 专利标题： Magnetoresistive memory device
- 专利标题（中）： 磁阻存储器件
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申请号： US14814158申请日： 2015-07-30
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公开(公告)号： US09461240B2公开(公告)日： 2016-10-04
- 发明人: Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Makoto Nagamine
- 申请人： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Makoto Nagamine
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 代理机构： Holtz, Holtz & Volek PC
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; H01L43/02 ; H01L43/10
摘要：
According to one embodiment, a magnetoresistive memory device includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on a side of the first or second magnetic layer opposite to the nonmagnetic layer. The third magnetic layer has a multilayer film having an artificial lattice structure, and the third magnetic layer is partly microcrystalline or amorphous.
公开/授权文献
- US20160254442A1 MAGNETORESISTIVE MEMORY DEVICE 公开/授权日：2016-09-01
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