Invention Grant
US09461242B2 Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
有权
磁存储单元，制造方法，半导体器件，存储器系统和电子系统
- Patent Title: Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
- Patent Title (中): 磁存储单元，制造方法，半导体器件，存储器系统和电子系统
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Application No.: US14026627Application Date: 2013-09-13
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Publication No.: US09461242B2Publication Date: 2016-10-04
- Inventor: Gurtej S. Sandhu , Witold Kula
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L43/10
- IPC: H01L43/10 ; G11C11/16 ; H01L43/12 ; H01L43/08 ; H01L27/22
Abstract:
A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy (“MA”) with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region, reducing an oxygen concentration and an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
Public/Granted literature
- US20150076485A1 MEMORY CELLS, METHODS OF FABRICATION, SEMICONDUCTOR DEVICES, MEMORY SYSTEMS, AND ELECTRONIC SYSTEMS Public/Granted day:2015-03-19
Information query
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