Invention Grant
US09472257B2 Hybrid magnetoresistive read only memory (MRAM) cache mixing single-ended and differential sensing
有权
混合磁阻只读存储器（MRAM）高速缓存混合单端和差分感测
- Patent Title: Hybrid magnetoresistive read only memory (MRAM) cache mixing single-ended and differential sensing
- Patent Title (中): 混合磁阻只读存储器（MRAM）高速缓存混合单端和差分感测
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Application No.: US14278055Application Date: 2014-05-15
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Publication No.: US09472257B2Publication Date: 2016-10-18
- Inventor: Xiangyu Dong , Taehyun Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/12 ; H01L43/08 ; H01L43/02 ; G11C11/00 ; G11C7/06
Abstract:
A hybrid cache architecture uses magnetoresistive random-access memory (MRAM) caches but has two different types of bit cell sensing. One type of bit cell sensing is single-ended and the other type of bit cell sensing is differential. The result is a uniform bit cell array but a non-uniform sense amplifier configuration.
Public/Granted literature
- US20150332750A1 HYBRID MAGNETORESISTIVE READ ONLY MEMORY (MRAM) CACHE MIXING SINGLE-ENDED AND DIFFERENTIAL SENSING Public/Granted day:2015-11-19
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