Invention Grant
- Patent Title: Methods of cross-coupling line segments on a wafer
- Patent Title (中): 交叉耦合晶片上的线段的方法
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Application No.: US14246197Application Date: 2014-04-07
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Publication No.: US09472455B2Publication Date: 2016-10-18
- Inventor: Jason E. Stephens , Lei Yuan , Lixia Lei , David Pritchard , Tuhin Guha Neogi
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Kristian E. Ziegler
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/768 ; H01L21/8234 ; H01L27/02

Abstract:
A method is provided for fabricating cross-coupled line segments on a wafer for use, for instance, in fabricating cross-coupled gates of two or more transistors. The fabricating includes: patterning a first line segment with a first side projection using a first mask; and patterning a second line segment with a second side projection using a second mask. The second line segment is offset from the first line segment, and the patterned second side projection overlies the patterned first side projection, and facilitates defining a cross-stitch segment connecting the first and second line segments. The method further includes selectively cutting the first and second line segments in defining the cross-coupled line segments from the first and second line segments and the cross-stitch segment.
Public/Granted literature
- US20150287604A1 METHODS OF CROSS-COUPLING LINE SEGMENTS ON A WAFER Public/Granted day:2015-10-08
Information query
IPC分类: