Invention Grant
- Patent Title: Over-mold packaging for wide band-gap semiconductor devices
- Patent Title (中): 用于宽带隙半导体器件的模包装
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Application No.: US14289216Application Date: 2014-05-28
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Publication No.: US09472480B2Publication Date: 2016-10-18
- Inventor: Simon Wood , Chris Hermanson
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel & Sibley, P.A.
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/29 ; H01L23/31 ; H01L29/20 ; H01L29/78 ; H01L23/495 ; H01L23/00
Abstract:
A transistor package includes a lead frame and a gallium nitride (GaN) transistor attached to the lead frame. The lead frame and the GaN transistor are surrounded by an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa. Using an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa allows the over-mold to handle the heat produced by the GaN transistor while preventing damage to the GaN transistor due to thermal expansion and/or contraction of the over-mold.
Public/Granted literature
- US20150348885A1 OVER-MOLD PACKAGING FOR WIDE BAND-GAP SEMICONDUCTOR DEVICES Public/Granted day:2015-12-03
Information query
IPC分类:
