公开(公告)号：US20150348885A1

公开(公告)日：2015-12-03

申请号：US14289216

申请日：2014-05-28

Applicant: Cree, Inc.

Inventor： Simon Wood ,  Chris Hermanson

IPC: H01L23/495 ,  H01L29/20 ,  H01L29/78 ,  H01L23/31

CPC classification number: H01L23/293 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49555 ,  H01L23/49562 ,  H01L23/49568 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L29/2003 ,  H01L29/78 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A transistor package includes a lead frame and a gallium nitride (GaN) transistor attached to the lead frame. The lead frame and the GaN transistor are surrounded by an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa. Using an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa allows the over-mold to handle the heat produced by the GaN transistor while preventing damage to the GaN transistor due to thermal expansion and/or contraction of the over-mold.

Abstract translation: 晶体管封装包括引线框和附接到引线框的氮化镓（GaN）晶体管。 引线框架和GaN晶体管被玻璃化转变温度大于约135℃并具有小于约20GPa的弯曲模量的外模包围。 使用具有大于约135℃的玻璃化转变温度和小于约20GPa的弯曲模量的过模具允许过模具处理由GaN晶体管产生的热量，同时防止由于热量而损坏GaN晶体管 膨胀和/或收缩的模具。

公开(公告)号：US20150348886A1

公开(公告)日：2015-12-03

申请号：US14289334

申请日：2014-05-28

Applicant: Cree, Inc.

Inventor： Simon Wood ,  James W. Milligan ,  Chris Hermanson

IPC: H01L23/495 ,  H01L29/778 ,  H01L29/20 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L23/49562 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H03F1/565 ,  H03F3/195 ,  H03F3/211 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/451 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A transistor package includes a lead frame, a wide band-gap transistor attached to the lead frame, and an over-mold surrounding the lead frame and the wide band-gap transistor. The wide band-gap transistor has a peak output power greater than 150 W when operated at a frequency up to 3.8 GHz. Using an over-mold along with a wide band-gap transistor in the transistor package allows the transistor package to achieve an exceptionally high efficiency, gain, and bandwidth, while keeping the manufacturing cost of the transistor package low.

Abstract translation: 晶体管封装包括引线框架，附接到引线框架的宽带隙晶体管和围绕引线框架和宽带隙晶体管的覆盖模块。 宽带隙晶体管的工作频率高达3.8 GHz时，峰值输出功率大于150 W。 与晶体管封装中的宽带隙晶体管一起使用模具可以使晶体管封装实现极高的效率，增益和带宽，同时保持晶体管封装的制造成本。

公开(公告)号：US09515011B2

公开(公告)日：2016-12-06

申请号：US14289334

申请日：2014-05-28

Applicant: Cree, Inc.

Inventor： Simon Wood ,  James W. Milligan ,  Chris Hermanson

IPC: H01L23/34 ,  H01L23/495 ,  H01L23/29 ,  H01L23/31 ,  H01L23/433 ,  H01L23/66

CPC classification number: H01L23/49562 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H03F1/565 ,  H03F3/195 ,  H03F3/211 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/451 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A transistor package includes a lead frame, a wide band-gap transistor attached to the lead frame, and an over-mold surrounding the lead frame and the wide band-gap transistor. The wide band-gap transistor has a peak output power greater than 150 W when operated at a frequency up to 3.8 GHz. Using an over-mold along with a wide band-gap transistor in the transistor package allows the transistor package to achieve an exceptionally high efficiency, gain, and bandwidth, while keeping the manufacturing cost of the transistor package low.

Abstract translation: 晶体管封装包括引线框架，附接到引线框架的宽带隙晶体管和围绕引线框架和宽带隙晶体管的覆盖模块。 宽带隙晶体管的工作频率高达3.8 GHz时，峰值输出功率大于150 W。 与晶体管封装中的宽带隙晶体管一起使用模具可以使晶体管封装实现极高的效率，增益和带宽，同时保持晶体管封装的制造成本。

公开(公告)号：US09472480B2

公开(公告)日：2016-10-18

申请号：US14289216

申请日：2014-05-28

Applicant: Cree, Inc.

Inventor： Simon Wood ,  Chris Hermanson

IPC: H01L29/15 ,  H01L31/0256 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/29 ,  H01L23/31 ,  H01L29/20 ,  H01L29/78 ,  H01L23/495 ,  H01L23/00

CPC classification number: H01L23/293 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49555 ,  H01L23/49562 ,  H01L23/49568 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L29/2003 ,  H01L29/78 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A transistor package includes a lead frame and a gallium nitride (GaN) transistor attached to the lead frame. The lead frame and the GaN transistor are surrounded by an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa. Using an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa allows the over-mold to handle the heat produced by the GaN transistor while preventing damage to the GaN transistor due to thermal expansion and/or contraction of the over-mold.

Abstract translation: 晶体管封装包括引线框和附接到引线框的氮化镓（GaN）晶体管。 引线框架和GaN晶体管被玻璃化转变温度大于约135℃并具有小于约20GPa的弯曲模量的外模包围。 使用具有大于约135℃的玻璃化转变温度和小于约20GPa的弯曲模量的过模具允许过模具处理由GaN晶体管产生的热量，同时防止由于热量而损坏GaN晶体管 膨胀和/或收缩的模具。