Invention Grant
- Patent Title: Substrate
- Patent Title (中): 基质
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Application No.: US14733559Application Date: 2015-06-08
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Publication No.: US09472610B2Publication Date: 2016-10-18
- Inventor: Katherine Crook , Stephen R Burgess
- Applicant: SPTS TECHNOLOGIES LIMITED
- Applicant Address: GB Newport
- Assignee: SPTS TECHNOLOGIES LIMITED
- Current Assignee: SPTS TECHNOLOGIES LIMITED
- Current Assignee Address: GB Newport
- Agency: Volentine & Whitt, PLLC
- Priority: GB1410317.0 20140610
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L49/02 ; H01L21/02 ; C23C14/10 ; H01L23/31 ; H01L23/00

Abstract:
A substrate having a dielectric film thereon, in which: the dielectric film comprises at least four stacked layers of a dielectric material; the stacked layers comprise compressive layers which are subject to a compressive stress, and tensile layers which are subject to a tensile stress; and there are at least two spaced apart tensile layers which are each adjacent to one or more compressive layers.
Public/Granted literature
- US20150357398A1 SUBSTRATE Public/Granted day:2015-12-10
Information query
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