公开(公告)号：US20200058498A1

公开(公告)日：2020-02-20

申请号：US16541615

申请日：2019-08-15

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Katherine Crook ,  Steve Burgess

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/34

Abstract: A method is for depositing silicon nitride by plasma-enhanced chemical vapour deposition (PECVD). The method includes providing a PECVD apparatus including a chamber and a substrate support disposed within the chamber, positioning a substrate on the substrate support, introducing a nitrogen gas (N2) precursor into the chamber, applying a high frequency (HF) RF power and a low frequency (LF) RF power to sustain a plasma in the chamber, introducing a silane precursor into the chamber while the HF and LF RF powers are being applied so that the silane precursor forms part of the plasma being sustained, and subsequently removing the LF RF power or reducing the LF RF power by at least 90% while continuing to sustain the plasma so that silicon nitride is deposited onto the substrate by PECVD.

公开(公告)号：US09783886B2

公开(公告)日：2017-10-10

申请号：US15064631

申请日：2016-03-09

Applicant: SPTS Technologies Limited

Inventor： Daniel T Archard ,  Stephen R Burgess ,  Mark I Carruthers ,  Andrew Price ,  Keith E Buchanan ,  Katherine Crook

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/513

CPC classification number: C23C16/455 ,  C23C16/513 ,  H01J37/32633 ,  H01J37/32834

Abstract: A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.

公开(公告)号：US09472610B2

公开(公告)日：2016-10-18

申请号：US14733559

申请日：2015-06-08

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Katherine Crook ,  Stephen R Burgess

IPC: H01L21/70 ,  H01L49/02 ,  H01L21/02 ,  C23C14/10 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L28/40 ,  C23C14/10 ,  C23C16/401 ,  C23C16/45523 ,  C23C28/04 ,  H01L21/02118 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02274 ,  H01L23/3192 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate having a dielectric film thereon, in which: the dielectric film comprises at least four stacked layers of a dielectric material; the stacked layers comprise compressive layers which are subject to a compressive stress, and tensile layers which are subject to a tensile stress; and there are at least two spaced apart tensile layers which are each adjacent to one or more compressive layers.

Abstract translation: 一种其上具有电介质膜的衬底，其中：所述电介质膜包括至少四层电介质材料层叠体; 堆叠层包括经受压应力的压缩层和承受拉应力的拉伸层; 并且存在至少两个间隔开的拉伸层，每个拉伸层各自邻近一个或多个压缩层。