Invention Grant
- Patent Title: Protection layer in CMOS image sensor array region
- Patent Title (中): CMOS图像传感器阵列区域中的保护层
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Application No.: US14144229Application Date: 2013-12-30
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Publication No.: US09473719B2Publication Date: 2016-10-18
- Inventor: Volume Chien , Yi-Sheng Liu , Chia-Yu Wei , Yun-Wei Cheng , Chi-Cherng Jeng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H04N5/374
- IPC: H04N5/374 ; H01L31/0232 ; H04N5/335

Abstract:
A semiconductor image sensor device having a conformal protective layer includes a semiconductor substrate a pixel-array region and a peripheral region. The conformal protective layer is disposed over a plurality of pixels having a photodiode and a plurality of transistors in the pixel-array region. Contacts to the plurality of transistors are surrounded by the conformal protective layer. In some embodiments, the conformal protective layer is the same material as transistor gate spacers in the peripheral region.
Public/Granted literature
- US20150189207A1 Protection Layer In CMOS Image Sensor Array Region Public/Granted day:2015-07-02
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