发明授权
- 专利标题: Wavefront adjustment in extreme ultra-violet (EUV) lithography
- 专利标题(中): 极紫外(EUV)光刻技术的波前调整
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申请号: US14022355申请日: 2013-09-10
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公开(公告)号: US09476764B2公开(公告)日: 2016-10-25
- 发明人: Chia-Ching Huang , Chia-Hao Hsu , Tzu-Hsiang Chen , Chia-Chen Chen
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Associates, LLC
- 主分类号: G01J1/42
- IPC分类号: G01J1/42 ; G02F1/29 ; G02B5/08 ; G02B27/00 ; G02F1/21
摘要:
Some embodiments of the present disclosure related to a method to form and operate the reflective surface to compensate for aberration effects on pattern uniformity. In some embodiments, the reflective surface comprises a mirror of within reduction optics of an EUV illumination tool. In some embodiments, the reflective surface comprises a reflective reticle. An EUV reflective surface topography comprising a reflective surface is disposed on a surface of a substrate, and is manipulated by mechanical force or thermal deformation. The substrate includes a plurality of cavities, where each cavity is coupled to a deformation element configured to expand a volume of the cavity and consequently deform a portion of the reflective surface above each cavity, for local control of the reflective surface through thermal deformation of a resistive material subject to an electric current, or mechanical deformation due to pressurized gas within the cavity or a piezoelectric effect.
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