Invention Grant
- Patent Title: Wavefront adjustment in extreme ultra-violet (EUV) lithography
- Patent Title (中): 极紫外(EUV)光刻技术的波前调整
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Application No.: US14022355Application Date: 2013-09-10
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Publication No.: US09476764B2Publication Date: 2016-10-25
- Inventor: Chia-Ching Huang , Chia-Hao Hsu , Tzu-Hsiang Chen , Chia-Chen Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: G01J1/42
- IPC: G01J1/42 ; G02F1/29 ; G02B5/08 ; G02B27/00 ; G02F1/21

Abstract:
Some embodiments of the present disclosure related to a method to form and operate the reflective surface to compensate for aberration effects on pattern uniformity. In some embodiments, the reflective surface comprises a mirror of within reduction optics of an EUV illumination tool. In some embodiments, the reflective surface comprises a reflective reticle. An EUV reflective surface topography comprising a reflective surface is disposed on a surface of a substrate, and is manipulated by mechanical force or thermal deformation. The substrate includes a plurality of cavities, where each cavity is coupled to a deformation element configured to expand a volume of the cavity and consequently deform a portion of the reflective surface above each cavity, for local control of the reflective surface through thermal deformation of a resistive material subject to an electric current, or mechanical deformation due to pressurized gas within the cavity or a piezoelectric effect.
Public/Granted literature
- US20150069253A1 WAVEFRONT ADJUSTMENT IN EXTREME ULTRA-VIOLET (EUV) LITHOGRAPHY Public/Granted day:2015-03-12
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