Invention Grant
- Patent Title: Eliminating or reducing programming errors when programming flash memory cells
- Patent Title (中): 在编程闪存单元时，消除或减少编程错误
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Application No.: US14094900Application Date: 2013-12-03
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Publication No.: US09477423B2Publication Date: 2016-10-25
- Inventor: Yu Cai , Yunxiang Wu , Zhengang Chen , Erich Haratsch
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Smith Tempel Blaha LLC
- Agent Robert A. Blaha
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/56
Abstract:
Mis-programming of MSB data in flash memory is avoided by maintaining a copy of LSB page data that has been written to flash memory and using the copy rather than the LSB page data read out of the flash cells in conjunction with the MSB values to determine the proper reference voltage ranges to be programmed into the corresponding flash cells. Because the copy is free of errors, using the copy in conjunction with the MSB values to determine the proper reference voltage ranges for the flash cells ensures that mis-programming of the reference voltage ranges will not occur.
Public/Granted literature
- US20150149698A1 ELIMINATING OR REDUCING PROGRAMMING ERRORS WHEN PROGRAMMING FLASH MEMORY CELLS Public/Granted day:2015-05-28
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