发明授权
- 专利标题： Method of vapor-diffusing impurities
- 专利标题（中）： 蒸气扩散杂质的方法
-
申请号： US13954472申请日： 2013-07-30
-
公开(公告)号： US09478423B2公开(公告)日： 2016-10-25
- 发明人: Kazuya Takahashi , Yoshikazu Furusawa , Mitsuhiro Okada
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer
- 优先权： JP2012-168724 20120730; JP2013-101309 20130513
- 主分类号： H01L21/223
- IPC分类号： H01L21/223 ; H01L21/324 ; H01L21/322 ; H01L21/22 ; H01L21/67
摘要：
A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.
公开/授权文献
- US09171722B2 Method of vapor-diffusing impurities 公开/授权日：2015-10-27
信息查询
IPC分类:
