Invention Grant
- Patent Title: Vertical nanowire semiconductor structures
- Patent Title (中): 垂直纳米线半导体结构
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Application No.: US14715041Application Date: 2015-05-18
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Publication No.: US09478611B2Publication Date: 2016-10-25
- Inventor: Boon Teik Chan , Clement Merckling
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP14168913 20140519
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/10 ; H01L29/786 ; H01L29/04 ; H01L29/20 ; H01L29/34 ; H01L21/02 ; B82Y10/00 ; B82Y40/00 ; H01L29/775 ; H01L29/41
Abstract:
An example semiconductor structure comprises a first surface and at least one nanowire, the at least one nanowire being perpendicular to the first surface, wherein the first surface is defect-poor and is made of a doped III-V semiconductor material, wherein the at least one nanowire is defect-poor and made of an undoped III-V semiconductor material having a lattice mismatch with the material of the first surface of from about 0% to 1%.
Public/Granted literature
- US20150333122A1 Vertical Nanowire Semiconductor Structures Public/Granted day:2015-11-19
Information query
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