Invention Grant
- Patent Title: Gate drive apparatus for resonant converters
- Patent Title (中): 谐振转换器的栅极驱动装置
-
Application No.: US14077406Application Date: 2013-11-12
-
Publication No.: US09479073B2Publication Date: 2016-10-25
- Inventor: Daoshen Chen , Heping Dai , Xujun Liu , Liming Ye , Dianbo Fu
- Applicant: FutureWei Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: Futurewei Technologies, Inc.
- Current Assignee: Futurewei Technologies, Inc.
- Current Assignee Address: US TX Plano
- Agency: Slater Matsil, LLP
- Main IPC: H02M3/335
- IPC: H02M3/335 ; H02M3/338 ; H02M1/08 ; H02M1/00

Abstract:
An apparatus comprises a bridge coupled between a bias voltage and ground, wherein the bridge comprises a first switch and a second switch connected in series and coupled between the bias voltage and ground and a third switch and a fourth switch connected in series and coupled between the bias voltage and ground, a resonant device coupled to the bridge, wherein the resonant device comprises a fixed capacitance, a gate capacitance and a magnetizing inductance, a transformer coupled to the resonant device, wherein the transformer comprises a primary winding and a plurality of secondary windings.
Public/Granted literature
- US20150131329A1 Gate Drive Apparatus for Resonant Converters Public/Granted day:2015-05-14
Information query
IPC分类: