发明授权
US09484080B1 High-bandwidth memory application with controlled impedance loading
有权
具有受控阻抗负载的高带宽存储器应用
- 专利标题: High-bandwidth memory application with controlled impedance loading
- 专利标题(中): 具有受控阻抗负载的高带宽存储器应用
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申请号: US14935705申请日: 2015-11-09
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公开(公告)号: US09484080B1公开(公告)日: 2016-11-01
- 发明人: Zhuowen Sun , Yong Chen , Kyong-Mo Bang
- 申请人: Invensas Corporation
- 申请人地址: US CA San Jose
- 专利权人: Invensas Corporation
- 当前专利权人: Invensas Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号: G11C5/06
- IPC分类号: G11C5/06 ; G11C11/408 ; G11C8/18 ; G11C11/409 ; H01L25/065 ; H01L25/18 ; H01L23/02 ; H01L23/64
摘要:
A microelectronic assembly can include an address bus comprising a plurality of signal conductors each passing sequentially through first, second, third, and fourth connection regions, and first and second microelectronic packages. The first microelectronic package can include first and second microelectronic elements, and the second microelectronic package can include third and fourth microelectronic elements. Each microelectronic element can be electrically coupled to the address bus via the respective connection region. An electrical characteristic between the first and second connection regions can be within a same tolerance of the electrical characteristic between the second and third connection regions.
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