Invention Grant
- Patent Title: MOSFET with asymmetric self-aligned contact
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Application No.: US14943663Application Date: 2015-11-17
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Publication No.: US09484306B1Publication Date: 2016-11-01
- Inventor: Kangguo Cheng , Xin Miao , Ruilong Xie , Tenko Yamashita
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L23/535 ; H01L21/8238 ; H01L21/768 ; H01L27/092 ; H01L23/528
Abstract:
A semiconductor device includes a source and drain on a substrate; a first and second gate on the source, and the second gate and a third gate on the drain; a source contact over the source and between the first and second gates, the source contact including first and second portions, the first portion in contact with the source and extending between the first and second gates, and the second portion contacting the first portion and extending over the first and second gates; and a drain contact formed over the drain and between the second and third gates, the drain contact including first and second portions, the first portion contacting the drain, extending between second and third gates, and recessed with respect to the first portion of the source contact, and the second portion in contact with the first portion and extending between and over the second and third gates.
Information query
IPC分类:
