Invention Grant
- Patent Title: Methods of forming a nanowire transistor device
- Patent Title (中): 形成纳米线晶体管器件的方法
-
Application No.: US14469741Application Date: 2014-08-27
-
Publication No.: US09484407B2Publication Date: 2016-11-01
- Inventor: Tim Baldauf , Stefan Flachowsky
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Priority: DE102013223263 20131114
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L29/165 ; H01L29/775 ; B82Y10/00 ; B82Y40/00 ; H01L29/778
Abstract:
A semiconductor device is provided including a semiconductor substrate and a nanowire formed over the semiconductor substrate and wherein the nanowire includes a first layer exhibiting tensile stress and a second layer exhibiting compressive stress.
Public/Granted literature
- US20150129964A1 NANOWIRE TRANSISTOR DEVICE Public/Granted day:2015-05-14
Information query
IPC分类:
