A flash memory device may include two or more flash memory cells organized as a NAND string in a block of flash memory cells, and flash cells, coupled to the NAND string at opposite ends, to function as select gates. The flash memory device may be capable of providing information related to a voltage threshold of the select gates to a flash controller, erasing the flash cells that function as select gates in response to a select gate erase command, and programming the flash cells that function as select gates in response to a select gate program command. A flash controller may be coupled to the flash memory device, and is capable of sending the select gate erase commend to the flash memory device if the information provided by the flash memory device indicates that the voltage threshold of at least one of the select gates is above a predetermined voltage level, and sending the select gate program command to the flash memory device if the information provided by the flash memory device indicates that the voltage threshold of at least one of the select gates is outside of a predetermined voltage range.