- 专利标题: Semiconductor device and method of fabricating the same
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申请号: US14845435申请日: 2015-09-04
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公开(公告)号: US09490214B2公开(公告)日: 2016-11-08
- 发明人: Byoung-Gue Min , Sang Choon Ko , Jong-Won Lim , Hokyun Ahn , Hyung Sup Yoon , Jae Kyoung Mun , Eun Soo Nam
- 申请人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 代理机构: Rabin & Berdo, P.C.
- 优先权: KR10-2012-0114266 20121015; KR10-2013-0029769 20130320
- 主分类号: H01L23/535
- IPC分类号: H01L23/535 ; H01L21/768 ; H01L21/02 ; H01L23/48 ; H01L21/28
摘要:
A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole.
公开/授权文献
- US20150380354A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日:2015-12-31
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