Invention Grant
US09490334B2 Semiconductor device having metal gate and manufacturing method thereof
有权
具有金属栅极的半导体器件及其制造方法
- Patent Title: Semiconductor device having metal gate and manufacturing method thereof
- Patent Title (中): 具有金属栅极的半导体器件及其制造方法
-
Application No.: US14510126Application Date: 2014-10-09
-
Publication No.: US09490334B2Publication Date: 2016-11-08
- Inventor: Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Feng-Yi Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201410454861 20140909
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L27/088 ; H01L29/51 ; H01L29/40
Abstract:
A semiconductor device having metal gate includes a substrate, a first metal gate positioned on the substrate, and a second metal gate positioned on the substrate. The first metal gate includes a first work function metal layer, and the first work function metal layer includes a taper top. The second metal gate includes a second work function metal layer. The first work function metal layer and the second work function metal layer are complementary to each other.
Public/Granted literature
- US20160071944A1 SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-03-10
Information query
IPC分类:
