Invention Grant
US09490341B2 Semiconductor device having metal gate and method for manufacturing semiconductor device having metal gate
有权
具有金属栅极的半导体器件和具有金属栅极的半导体器件的制造方法
- Patent Title: Semiconductor device having metal gate and method for manufacturing semiconductor device having metal gate
- Patent Title (中): 具有金属栅极的半导体器件和具有金属栅极的半导体器件的制造方法
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Application No.: US14704994Application Date: 2015-05-06
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Publication No.: US09490341B2Publication Date: 2016-11-08
- Inventor: En-Chiuan Liou , Chih-Wei Yang , Yu-Cheng Tung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW104110713A 20150401
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L29/423

Abstract:
A method for manufacturing a semiconductor device having metal gate includes following steps. A substrate is provided. At least a transistor including a dummy gate is formed on the substrate and the transistor is embedded in an interlayer dielectric (ILD) layer. A first removal process is performed to remove a portion of the dummy gate to form a first recess in the transistor. An etching process is subsequently performed to remove a portion of the ILD layer to widen the first recess and to form a widened first recess. A second removal process is subsequently performed to remove the dummy gate entirely and to form a second recess in the transistor. A metal gate is formed in the second recess and followed by forming an insulating cap layer on the metal gate.
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