Invention Grant
- Patent Title: Integrated circuit device having through-silicon-via structure
- Patent Title (中): 具有通硅通孔结构的集成电路器件
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Application No.: US13919580Application Date: 2013-06-17
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Publication No.: US09496218B2Publication Date: 2016-11-15
- Inventor: Do-Sun Lee , Kun-Sang Park , Byung-Lyul Park , Seong-min Son , Gil-heyun Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2012-0077920 20120717
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/48 ; H01L21/768 ; H01L21/288 ; H01L23/498 ; H01L23/31 ; H01L25/065
Abstract:
An integrated circuit device including a through-silicon-via (TSV) structure and methods of manufacturing the same are provided. The integrated circuit device may include the TSV structure penetrating through a semiconductor structure. The TSV structure may include a first through electrode unit including impurities of a first concentration and a second through electrode unit including impurities of a second concentration greater than the first concentration.
Public/Granted literature
- US20140021633A1 Integrated Circuit Device Having Through-Silicon-Via Structure and Method of Manufacturing the Same Public/Granted day:2014-01-23
Information query
IPC分类:
