Invention Grant
- Patent Title: Silicon carbide device and a method for forming a silicon carbide device
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Application No.: US14974553Application Date: 2015-12-18
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Publication No.: US09496346B2Publication Date: 2016-11-15
- Inventor: Roland Rupp , Christian Hecht , Jens Konrath , Wolfgang Bergner , Hans-Joachim Schulze , Rudolf Elpelt
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technology AG
- Current Assignee: Infineon Technology AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/16 ; H01L21/04 ; H01L29/66 ; H01L21/56 ; H01L23/29 ; H01L23/31 ; H01L29/78 ; H01L29/06 ; H01L29/872
Abstract:
A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.
Public/Granted literature
- US20160104779A1 SILICON CARBIDE DEVICE AND A METHOD FOR FORMING A SILICON CARBIDE DEVICE Public/Granted day:2016-04-14
Information query
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