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US09502607B2 Method for producing an active zone for an optoelectronic semiconductor chip and optoelectronic semiconductor chip 有权
光电子半导体芯片和光电子半导体芯片的有源区的制造方法

Method for producing an active zone for an optoelectronic semiconductor chip and optoelectronic semiconductor chip
Abstract:
In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer (24) based on Alx4Iny4Ga1−x4−y4N where 0≦x4≦0.40 and on average 0
Abstract(Chinese):

在至少一个实施例中，该方法被设计为产生光电子半导体芯片的有源区，并且包括以下步骤：基于Al x 4 In y 4 Ga 1-x 4-y 4 N生长第四势垒层（24），其中0≤x4≤0.40并且平均 0

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