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1.发明申请公开(公告)号：US20220344532A1
公开(公告)日：2022-10-27
申请号：US17811761
申请日：2022-07-11
摘要： In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 1019 cm−3.
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2.发明申请公开(公告)号：US20190245110A1
公开(公告)日：2019-08-08
申请号：US16384550
申请日：2019-04-15
CPC分类号： H01L31/1852 , H01L21/0243 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L31/03044 , H01L31/1856 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/12 , H01L33/22 , H01L33/32 , H01L2933/0033
摘要： A semiconductor chip and a method for producing a semiconductor chip are disclosed. In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface, which is formed by a planar region having a plurality of three-dimensional surface structures on the planar region, a nucleation layer composed of oxygen-containing AlN directly disposed on the growth surface and a nitride-based semiconductor layer sequence disposed on the nucleation layer, wherein the semiconductor layer sequence is selectively grown from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.
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公开(公告)号：US20190237617A1
公开(公告)日：2019-08-01
申请号：US16329860
申请日：2017-08-28
发明人： Werner Bergbauer , Joachim Hertkorn
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/0075 , H01L33/32 , H01S5/3407
摘要： An optoelectronic component includes an active layer having a multiple quantum well structure, wherein the multiple quantum well structure includes quantum well layers, including Alx1Iny1Ga1-x1-y1N with 0≤x1
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4.发明申请公开(公告)号：US20180190874A1
公开(公告)日：2018-07-05
申请号：US15737724
申请日：2016-06-16
发明人： Simeon Katz , Kai Gehrke , Massimo Drago , Joachim Hertkorn
IPC分类号： H01L33/42 , H01L33/32 , H01L33/12 , H01L33/00 , H01L31/0304 , H01L31/0224
CPC分类号： H01L33/42 , H01L31/022475 , H01L31/03044 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/44 , H01L2933/0016
摘要： A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.
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5.发明申请METHOD FOR PRODUCING AN ACTIVE ZONE FOR AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP 有权用于生产光电半导体芯片和光电半导体芯片的活性区域的方法公开(公告)号：US20150108426A1
公开(公告)日：2015-04-23
申请号：US14404444
申请日：2013-05-03
CPC分类号： H01L33/0075 , H01L33/0025 , H01L33/06 , H01L33/32
摘要： In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer (24) based on Alx4Iny4Ga1-x4-y4N where 0≦x4≦0.40 and on average 0
摘要翻译： 在至少一个实施例中，该方法被设计成产生用于光电子半导体芯片的有源区，并且包括以下步骤：基于Al x 4 In y 4 Ga 1-x 4-y 4 N生长第四势垒层（24），其中0和nlE; x4和nlE; 0.40并且平均 0
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公开(公告)号：US11094845B2
公开(公告)日：2021-08-17
申请号：US16489835
申请日：2018-03-15
发明人： Massimo Drago , Alexander Frey , Joachim Hertkorn
摘要： A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Alx1Ga1-x1-y1Iny1N, where-in y1≥0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Alx2Ga1-x2-y2Iny2N, wherein x2≥0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Alx3Ga1-x3-y3Iny3N, wherein x3+y3≤0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.
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公开(公告)号：US11018281B2
公开(公告)日：2021-05-25
申请号：US16313945
申请日：2017-06-26
摘要： An optoelectronic semiconductor body includes an active region including a quantum well that generates electromagnetic radiation, a first region that impedes passage of charge carriers from the active region, and a second region that impedes passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, and the first region and the second region contain aluminum.
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公开(公告)号：US11018278B2
公开(公告)日：2021-05-25
申请号：US16488540
申请日：2018-02-28
IPC分类号： H01L33/14 , H01L31/0352 , H01L31/0304 , H01L33/32
摘要： A semiconductor body is disclosed. In an embodiment a semiconductor body includes a p-doped region, an active region, an intermediate layer and a layer stack containing indium, wherein an indium concentration in the layer stack changes along a stacking direction, wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants, wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack, wherein the intermediate layer and/or the layer stack are n-doped at least in places, wherein a dopant concentration of the layer stack is at least 5*1017 1/cm3 and at most 2*1018 1/cm3, and wherein a dopant concentration of the intermediate layer is at least 2*1018 1/cm3 and at most 3*1019 1/cm3.
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公开(公告)号：US20190267511A1
公开(公告)日：2019-08-29
申请号：US16319454
申请日：2017-09-04
发明人： Werner Bergbauer , Joachim Hertkorn
摘要： A semiconductor layer sequence is disclosed. In an embodiment the semiconductor layer sequence includes a pre-barrier layer comprising AlGaN, a pre-quantum well comprising InGaN having a first band gap, a multi-quantum well structure comprising a plurality of alternating main quantum wells of InGaN having a second band gap and main barrier layers of AlGaN or AlInGaN, wherein the second band gap is smaller than the first band gap and the main quantum wells are configured to generate a radiation having a wavelength of maximum intensity between 365 nm and 490 nm inclusive, a post-quantum well with a third band gap which is larger than the second band gap, a post-barrier layer comprising AlGaN or AlInGaN and an electron-blocking layer including AlGaN.
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公开(公告)号：US10354865B2
公开(公告)日：2019-07-16
申请号：US15573468
申请日：2016-05-11
发明人： Joachim Hertkorn , Lorenzo Zini , Alexander Frey
摘要： A method for procuring a nitride compound semiconductor device is disclosed. In an embodiment the method includes growing a first nitride compound semiconductor layer onto a growth substrate, depositing a masking layer, growing a second nitride compound semiconductor layer onto the masking layer, growing a third nitride compound semiconductor layer onto the second nitride compound semiconductor layer such that the third nitride compound semiconductor layer has non-planar structures and growing a fourth nitride compound semiconductor layer onto the non-planar structures such that the fourth nitride compound semiconductor layer has an essentially planar surface. The method further includes growing a functional layer sequence of the nitride compound semiconductor device, connecting a side of the functional layer sequence located opposite to the growth substrate to a carrier and removing the growth substrate.
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