Invention Grant
- Patent Title: Method of improving line roughness in substrate processing
- Patent Title (中): 改善基板加工中的线粗糙度的方法
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Application No.: US14676356Application Date: 2015-04-01
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Publication No.: US09508557B2Publication Date: 2016-11-29
- Inventor: Hoyoung Kang
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood Herron & Evans LLP
- Main IPC: H01L21/304
- IPC: H01L21/304 ; H01L21/027 ; H01L21/324 ; H01L21/311 ; H05B3/22 ; H01L21/687 ; H01L21/302 ; H01L21/3065 ; H01L21/67 ; H01L21/677

Abstract:
Provided is a method for processing a semiconductor substrate to reduce line roughness, the method comprising: positioning a substrate in a film-forming system, the film-forming system comprising a chuck having a clamping mechanism configured to hold the substrate in a processing chamber and flex the substrate by displacing a center of the substrate relative to a peripheral edge of the substrate so as to create a concave surface during processing; coating the substrate with a layer of material; performing a post apply bake process; flexing the substrate to create the concave surface either during the post apply bake or following the post apply bake process, wherein the concave surface has a degree of concavity measured at the center of the substrate that exceeds a base number of microns; and unflexing the substrate and inducing tensile stress in the layer of material on the substrate.
Public/Granted literature
- US20160148812A1 METHOD OF IMPROVING LINE ROUGHNESS IN SUBSTRATE PROCESSING Public/Granted day:2016-05-26
Information query
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