Invention Grant
- Patent Title: Methods of forming conductive jumper traces
- Patent Title (中): 形成导电跳线迹线的方法
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Application No.: US13929775Application Date: 2013-06-27
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Publication No.: US09508635B2Publication Date: 2016-11-29
- Inventor: HanGil Shin , HeeJo Chi , NamJu Cho
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/498 ; H01L21/48 ; H05K3/46 ; H01L23/00 ; H01L21/56 ; H05K1/09 ; H05K3/12

Abstract:
Methods of forming conductive jumper traces for semiconductor devices and packages. Substrate is provided having first, second and third trace lines formed thereon, where the first trace line is between the second and third trace lines. The first trace line can be isolated with a covering layer. A conductive layer can be formed between the second and third trace lines and over the first trace line by a depositing process followed by a heating process to alter the chemical properties of the conductive layer. The resulting conductive layer is able to conform to the covering layer and serve to provide electrical connection between the second and third trace lines.
Public/Granted literature
- US20150004748A1 Methods of Forming Conductive Jumper Traces Public/Granted day:2015-01-01
Information query
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