公开(公告)号：US09691707B2

公开(公告)日：2017-06-27

申请号：US15130452

申请日：2016-04-15

申请人： STATS ChipPAC, Ltd.

发明人： HeeJo Chi ,  HanGil Shin ,  NamJu Cho

IPC分类号： H01L23/48 ,  H01L23/02 ,  H01L21/00 ,  H01L23/538 ,  H01L23/528 ,  H01L21/768 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L24/19 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/768 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/528 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/73 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68386 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/08146 ,  H01L2224/08235 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/19 ,  H01L2224/24227 ,  H01L2224/25171 ,  H01L2224/82039 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10322 ,  H01L2924/10324 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10335 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/153 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/82 ,  H01L2224/08

摘要： A semiconductor device has a plurality of semiconductor die. A substrate is provided with bumps disposed over the substrate. A first prefabricated insulating film is disposed between the semiconductor die and substrate. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The bumps include a copper core encapsulated within copper plating. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The substrate includes a conductive layer formed in the substrate and coupled to the bumps. The semiconductor die is disposed between the bumps of the substrate. The bumps and the semiconductor die are embedded within the first prefabricated insulating film. A portion of the first prefabricated insulating film is removed to expose the bumps. The bumps electrically connect the substrate to the interconnect structure.

公开(公告)号：US20150004750A1

公开(公告)日：2015-01-01

申请号：US13929767

申请日：2013-06-27

申请人： STATS ChipPAC, Ltd.

发明人： HeeJo Chi ,  HanGil Shin ,  NamJu Cho ,  KyungMoon Kim

IPC分类号： H01L23/00 ,  H01L25/00

CPC分类号： H01L24/82 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/73 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2924/014

摘要： Methods of forming conductive materials on contact pads for semiconductor devices and packages. Substrate is provided with contact pads formed thereon. Conductive material is formed over the contact pads by a depositing process followed by a heating process to alter the chemical properties of the conductive material. Optionally, a dispersing process may be incorporated. An interconnect structure can be mounted over the conductive material where the interconnect structure is attached to the conductive material without any active treatment to the conductive material after formation.

摘要翻译： 在半导体器件和封装的接触焊盘上形成导电材料的方法。 衬底上形成有接触焊盘。 导电材料通过沉积工艺形成在接触垫上，然后进行加热处理以改变导电材料的化学性质。 任选地，可以并入分散过程。 互连结构可以安装在导电材料上，其中互连结构附接到导电材料，而在形成之后没有对导电材料的任何主动处理。

公开(公告)号：US20130299974A1

公开(公告)日：2013-11-14

申请号：US13943737

申请日：2013-07-16

申请人： STATS ChipPAC, Ltd.

发明人： HeeJo Chi ,  NamJu Cho ,  HanGil Shin

IPC分类号： H01L21/78 ,  H01L23/498

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/11003 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/48091 ,  H01L2224/48157 ,  H01L2224/48158 ,  H01L2224/4816 ,  H01L2224/73265 ,  H01L2224/81001 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/83 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to the wafer such that the first die is disposed over the wafer and electrically connected to the TSV and the second die is disposed within the cavity. An encapsulant is deposited over the wafer and first and second die. A portion of the encapsulant is removed to expose a first surface of the first die. A portion of the wafer is removed to expose the TSV and a surface of the second die. The remaining portion of the wafer operates as a TSV interposer for the first and second die. An interconnect structure is formed over the TSV interposer.

摘要翻译： 通过将半导体晶片安装到临时载体上来制造半导体器件。 通过晶片形成多个TSV。 部分地通过晶片形成空腔。 第一半导体管芯安装到第二半导体管芯。 第一和第二管芯安装到晶片上，使得第一管芯设置在晶片上并电连接到TSV，第二管芯设置在腔内。 密封剂沉积在晶片和第一和第二裸片上。 去除一部分密封剂以暴露第一管芯的第一表面。 去除晶片的一部分以暴露TSV和第二模具的表面。 晶片的剩余部分用作第一和第二裸片的TSV插入器。 在TSV插入器上形成互连结构。

公开(公告)号：US09263332B2

公开(公告)日：2016-02-16

申请号：US13943737

申请日：2013-07-16

申请人： STATS ChipPAC, Ltd.

发明人： HeeJo Chi ,  NamJu Cho ,  HanGil Shin

IPC分类号： H01L23/02 ,  H01L21/78 ,  H01L21/683 ,  H01L23/498 ,  H01L23/538 ,  H01L23/552 ,  H01L25/18 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/11003 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/48091 ,  H01L2224/48157 ,  H01L2224/48158 ,  H01L2224/4816 ,  H01L2224/73265 ,  H01L2224/81001 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/83 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to the wafer such that the first die is disposed over the wafer and electrically connected to the TSV and the second die is disposed within the cavity. An encapsulant is deposited over the wafer and first and second die. A portion of the encapsulant is removed to expose a first surface of the first die. A portion of the wafer is removed to expose the TSV and a surface of the second die. The remaining portion of the wafer operates as a TSV interposer for the first and second die. An interconnect structure is formed over the TSV interposer.

公开(公告)号：US20130105970A1

公开(公告)日：2013-05-02

申请号：US13683946

申请日：2012-11-21

申请人： STATS ChipPAC, Ltd.

发明人： HeeJo Chi ,  NamJu Cho ,  HanGil Shin

IPC分类号： H01L23/498 ,  H01L23/34 ,  H01L21/56

CPC分类号： H01L23/49816 ,  H01L21/4832 ,  H01L21/56 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/34 ,  H01L23/367 ,  H01L23/4334 ,  H01L23/49524 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/18 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24227 ,  H01L2224/29099 ,  H01L2224/29186 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/05432 ,  H01L2924/00014 ,  H01L2924/0542 ,  H01L2924/0503 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155

摘要： A semiconductor device has a prefabricated multi-die leadframe with a base and integrated raised die paddle and a plurality of bodies extending from the base. A thermal interface layer is formed over a back surface of a semiconductor die or top surface of the raised die paddle. The semiconductor die is mounted over the raised die paddle between the bodies of the leadframe with the TIM disposed between the die and raised die paddle. An encapsulant is deposited over the leadframe and semiconductor die. Vias can be formed in the encapsulant. An interconnect structure is formed over the leadframe, semiconductor die, and encapsulant, including into the vias. The base is removed to separate the bodies from the raised die paddle. The raised die paddle provides heat dissipation for the semiconductor die. The bodies are electrically connected to the interconnect structure. The bodies operate as conductive posts for electrical interconnect.

摘要翻译： 半导体器件具有预制的多管芯引线框架，其具有基底和集成凸起的裸片焊盘以及从基部延伸的多个主体。 热界面层形成在半导体管芯的背表面或凸起的管芯焊盘的顶表面上。 半导体管芯安装在引线框架的主体之间的凸起的模板上，并且TIM设置在模具和凸起的模板之间。 封装剂沉积在引线框架和半导体管芯上。 可以在密封剂中形成通孔。 在引线框架，半导体管芯和密封剂之上形成互连结构，包括到通孔中。 移除基座以将体与凸起模片分离。 凸起的芯片为半导体管芯提供散热。 主体电连接到互连结构。 主体用作电气互连的导电柱。

公开(公告)号：US09362161B2

公开(公告)日：2016-06-07

申请号：US14220336

申请日：2014-03-20

申请人： STATS ChipPAC, Ltd.

发明人： HeeJo Chi ,  HanGil Shin ,  NamJu Cho

IPC分类号： H01L23/48 ,  H01L21/00 ,  H01L21/44 ,  H01L21/768 ,  H01L23/528 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L24/19 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/768 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/528 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/73 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68386 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/08146 ,  H01L2224/08235 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/19 ,  H01L2224/24227 ,  H01L2224/25171 ,  H01L2224/82039 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10322 ,  H01L2924/10324 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10335 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/153 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/82 ,  H01L2224/08

摘要： A semiconductor device has a plurality of semiconductor die. A substrate is provided with bumps disposed over the substrate. A first prefabricated insulating film is disposed between the semiconductor die and substrate. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The bumps include a copper core encapsulated within copper plating. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The substrate includes a conductive layer formed in the substrate and coupled to the bumps. The semiconductor die is disposed between the bumps of the substrate. The bumps and the semiconductor die are embedded within the first prefabricated insulating film. A portion of the first prefabricated insulating film is removed to expose the bumps. The bumps electrically connect the substrate to the interconnect structure.

摘要翻译： 半导体器件具有多个半导体管芯。 衬底设置有设置在衬底上的凸起。 第一预制绝缘膜设置在半导体管芯和衬底之间。 在半导体管芯和第一预制绝缘膜上形成互连结构。 凸块包括封装在镀铜中的铜芯。 第一预制绝缘膜包括玻璃布，玻璃纤维或玻璃填料。 衬底包括形成在衬底中并耦合到凸块的导电层。 半导体管芯设置在衬底的凸块之间。 凸块和半导体管芯嵌入在第一预制绝缘膜内。 去除第一预制绝缘膜的一部分以暴露凸块。 凸块将基板电连接到互连结构。

公开(公告)号：US20150004748A1

公开(公告)日：2015-01-01

申请号：US13929775

申请日：2013-06-27

申请人： STATS ChipPAC, Ltd.

发明人： HanGil Shin ,  HeeJo Chi ,  NamJu Cho

IPC分类号： H01L23/00

CPC分类号： H01L23/49838 ,  H01L21/4867 ,  H01L21/561 ,  H01L23/49894 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48229 ,  H01L2224/4917 ,  H01L2224/49173 ,  H01L2224/49176 ,  H01L2224/49179 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/181 ,  H05K1/092 ,  H05K3/125 ,  H05K3/1283 ,  H05K3/4685 ,  H05K2201/026 ,  H05K2201/0323 ,  H05K2203/095 ,  H05K2203/1194 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00015 ,  H01L2924/0665 ,  H01L2924/00012

摘要： Methods of forming conductive jumper traces for semiconductor devices and packages. Substrate is provided having first, second and third trace lines formed thereon, where the first trace line is between the second and third trace lines. The first trace line can be isolated with a covering layer. A conductive layer can be formed between the second and third trace lines and over the first trace line by a depositing process followed by a heating process to alter the chemical properties of the conductive layer. The resulting conductive layer is able to conform to the covering layer and serve to provide electrical connection between the second and third trace lines.

摘要翻译： 形成用于半导体器件和封装的导电跳线迹线的方法。 衬底具有形成在其上的第一，第二和第三迹线，其中第一迹线位于第二和第三迹线之间。 第一条痕迹线可以用覆盖层隔离。 可以通过沉积工艺在第二和第三迹线之间和第一迹线上形成导电层，随后进行加热处理以改变导电层的化学性质。 所得到的导电层能够符合覆盖层并且用于在第二和第三迹线之间提供电连接。

公开(公告)号：US09842808B2

公开(公告)日：2017-12-12

申请号：US13645385

申请日：2012-10-04

申请人： STATS ChipPAC, Ltd.

发明人： HanGil Shin ,  NamJu Cho ,  HeeJo Chi

IPC分类号： H01L23/48 ,  H01L23/538 ,  H01L21/56 ,  H01L23/00 ,  H01L25/10 ,  H01L25/00 ,  H01L25/16 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/5389 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/495 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/215 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a plurality of semiconductor die or components mounted over a carrier. A leadframe is mounted over the carrier between the semiconductor die. The leadframe has a plate and bodies extending from the plate. The bodies of the leadframe are disposed around a perimeter of the semiconductor die. An encapsulant is deposited over the carrier, leadframe, and semiconductor die. A plurality of conductive vias is formed through the encapsulant and electrically connected to the bodies of the leadframe and contact pads on the semiconductor die. An interconnect structure is formed over the encapsulant and electrically connected to the conductive vias. A first channel is formed through the interconnect structure, encapsulant, leadframe, and partially through the carrier. The carrier is removed to singulate the semiconductor die. A second channel is formed through the plate of the leadframe to physically separate the bodies of the leadframe.

公开(公告)号：US09269691B2

公开(公告)日：2016-02-23

申请号：US13918103

申请日：2013-06-14

申请人： STATS ChipPAC, Ltd.

发明人： HeeJo Chi ,  HanGil Shin ,  NamJu Cho

IPC分类号： H01L23/49 ,  H01L23/00 ,  H01L23/36 ,  H01L23/498 ,  H01L21/56 ,  H01L23/538 ,  H01L23/552 ,  H01L21/683 ,  H01L23/522 ,  H01L23/31 ,  H01L25/10

CPC分类号： H01L24/81 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/522 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/11 ,  H01L24/13 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/92 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/24246 ,  H01L2224/24247 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82031 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2224/03 ,  H01L2224/81805

摘要： A semiconductor device has a semiconductor die. The semiconductor die is disposed over a conductive substrate. An encapsulant is deposited over the semiconductor die. A first interconnect structure is formed over the encapsulant. An opening is formed through the substrate to isolate a portion of the substrate electrically connected to the first interconnect structure. A bump is formed over the first interconnect structure. Conductive vias are formed through the encapsulant and electrically connected to the portion of the substrate. A plurality of bumps is formed over the semiconductor die. A first conductive layer is formed over the encapsulant. A first insulating layer is formed over the first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. Protrusions extend above the substrate.

摘要翻译： 半导体器件具有半导体管芯。 半导体管芯设置在导电衬底上。 密封剂沉积在半导体管芯上。 在密封剂上形成第一互连结构。 通过衬底形成开口以隔离电连接到第一互连结构的衬底的一部分。 在第一互连结构上形成凸块。 导电孔通过密封剂形成并电连接至基底的部分。 在半导体管芯上形成多个凸点。 在密封剂上形成第一导电层。 第一绝缘层形成在第一导电层上。 在第一绝缘层和第一导电层上形成第二导电层。 在第一绝缘层和第二导电层上形成第二绝缘层。 突起延伸到基底之上。

公开(公告)号：US20150091157A9

公开(公告)日：2015-04-02

申请号：US13918103

申请日：2013-06-14

申请人： STATS ChipPAC, Ltd.

发明人： HeeJo Chi ,  HanGil Shin ,  NamJu Cho

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L21/56 ,  H01L23/522

CPC分类号： H01L24/81 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/522 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/11 ,  H01L24/13 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/92 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/24246 ,  H01L2224/24247 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82031 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2224/03 ,  H01L2224/81805

摘要： A semiconductor device has a semiconductor die. The semiconductor die is disposed over a conductive substrate. An encapsulant is deposited over the semiconductor die. A first interconnect structure is formed over the encapsulant. An opening is formed through the substrate to isolate a portion of the substrate electrically connected to the first interconnect structure. A bump is formed over the first interconnect structure. Conductive vias are formed through the encapsulant and electrically connected to the portion of the substrate. A plurality of bumps is formed over the semiconductor die. A first conductive layer is formed over the encapsulant. A first insulating layer is formed over the first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. Protrusions extend above the substrate.

摘要翻译： 半导体器件具有半导体管芯。 半导体管芯设置在导电衬底上。 密封剂沉积在半导体管芯上。 在密封剂上形成第一互连结构。 通过衬底形成开口以隔离电连接到第一互连结构的衬底的一部分。 在第一互连结构上形成凸块。 导电孔通过密封剂形成并电连接至基底的部分。 在半导体管芯上形成多个凸点。 在密封剂上形成第一导电层。 第一绝缘层形成在第一导电层上。 在第一绝缘层和第一导电层上形成第二导电层。 在第一绝缘层和第二导电层上形成第二绝缘层。 突起延伸到基底之上。