Invention Grant
- Patent Title: Sonos device
- Patent Title (中): Sonos设备
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Application No.: US15077892Application Date: 2016-03-22
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Publication No.: US09508734B2Publication Date: 2016-11-29
- Inventor: Chin-Sheng Yang , Chien-Hung Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L27/115 ; H01L29/66 ; H01L29/423 ; H01L21/28
Abstract:
A silicon-oxide-nitride-oxide-silicon (SONOS) device is disclosed. The SONOS device includes a substrate; a first oxide layer on the substrate; a silicon-rich trapping layer on the first oxide layer; a nitrogen-containing layer on the silicon-rich trapping layer; a silicon-rich oxide layer on the nitrogen-containing layer; and a polysilicon layer on the silicon-rich oxide layer.
Public/Granted literature
- US20160204121A1 SONOS DEVICE Public/Granted day:2016-07-14
Information query
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