Invention Grant
- Patent Title: Copper alloy sputtering target
- Patent Title (中): 铜合金溅射靶
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Application No.: US14470074Application Date: 2014-08-27
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Publication No.: US09518320B2Publication Date: 2016-12-13
- Inventor: Satoru Mori , Toshio Sakamoto , Kiyoyuki Ookubo
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2013-179386 20130830; JP2014-149940 20140723
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C22C9/00 ; H01J37/34 ; C22C1/04
Abstract:
A copper alloy sputtering target is made of a copper alloy having a composition containing Ca in a range of 0.3 mass % to 1.7 mass % with a remainder of Cu and inevitable impurities, a Ca-segregated phase (10) in which Ca is segregated is dispersed in a matrix phase, and the Ca-segregated phase contains a Cu-dispersed phase (11) made of Cu.
Public/Granted literature
- US20150060269A1 COPPER ALLOY SPUTTERING TARGET Public/Granted day:2015-03-05
Information query
IPC分类:
