发明授权
- 专利标题： Single crystal diamond
- 专利标题（中）： 单晶钻石
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申请号： US11743680申请日： 2007-05-03
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公开(公告)号： US09518338B2公开(公告)日： 2016-12-13
- 发明人: Geoffrey Alan Scarsbrook , Philip Maurice Martineau , Daniel James Twitchen
- 申请人： Geoffrey Alan Scarsbrook , Philip Maurice Martineau , Daniel James Twitchen
- 申请人地址： GB Didcot
- 专利权人： Element Six Technologies Limited
- 当前专利权人： Element Six Technologies Limited
- 当前专利权人地址： GB Didcot
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 代理商 Dean W. Russell; Clark F. Weight
- 优先权： GB0221949.1 20020920
- 主分类号： C01B31/06
- IPC分类号： C01B31/06 ; C30B25/02 ; C30B33/00 ; C30B29/04
摘要：
A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapor deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.
公开/授权文献
- US20080085233A1 SINGLE CRYSTAL DIAMOND 公开/授权日：2008-04-10