摘要:
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the microwave plasma reactor further comprises an electrically conductive plasma stabilizing annulus disposed around the substrate holder within the plasma chamber.
摘要:
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.
摘要:
A diamond based electrochemical band sensor comprising: a diamond body; and a plurality of boron doped diamond band electrodes disposed within the diamond body, wherein at least a portion of each of the plurality of boron doped diamond band electrodes is doped with boron to a level suitable to achieve metallic conduction, the boron doped diamond electrodes being spaced apart by non-conductive intrinsic layers of diamond, wherein the diamond body comprises a front sensing surface with the plurality of boron doped diamond band electrodes being exposed at said sensing surface and extending in an elongate manner across said surface, and wherein each boron doped diamond electrode has a length/width ratio of at least 10 at the front sensing surface.
摘要:
A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
摘要:
A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.
摘要:
A diamond element (10) having a convex surface is disclosed, the convex surface including a spherical segment for which the maximum peak to valley deviation from a perfect spherical surface is less than about 5 μm. The diamond element (10) may be a solid polycrystalline diamond material and/or may comprise base material which is coated with diamond. Alternatively or in addition, the RMS deviation from a perfect spherical surface may be less than about 500 nm, or the RMS roughness less than about 30 nm. A diamond element (10) with a radius of curvature less than about 20 mm is also disclosed. In one aspect a diamond element (10) having a conical half-angle greater than about 10° is described. Diamond elements (10) of this type are intended for use as metrology tips. Key to this invention is the realization that a diamond surface, particularly a diamond surface with low Ra (roughness) and which is free of defects such as pits, digs and scratches, accumulates less material from the surface being measured, and thus provides a longer life.
摘要:
The present invention relates to a diamond electronic device comprising a functional interface between two solid materials, wherein the interface is formed by a planar first surface of a first layer of single crystal diamond and a second layer formed on the first surface of the first diamond layer, the second layer being solid, non-metallic and selected from diamond, a polar material and a dielectric material, and wherein the planar first surface of the first layer of single crystal diamond has an Rq of less than 10 nm and has at least one of the following characteristics: (a) the first surface is an etched surface; (b) a density of dislocations in the first diamond layer breaking the first surface is less than 400 cm−2 measured over an area greater than 0.014 cm2; (c) a density of dislocations in the second layer breaking a notional or real surface lying within the second layer parallel to the interface and within 50 μm of the interface is less than 400 cm−2 measured over an area greater than 0.014 cm2; and (d) the first surface has an Rq less than 1 nm.
摘要:
A method of producing a diamond coated surface on a substrate. A surface of the substrate is prepared by exposing it to a power beam, such as an electron beam, to increase the surface area and surface roughness. Such preparation may also provide the surface with three dimensional features onto which a diamond layer can adhere and mechanically lock. Adhesion of a diamond layer applied to the prepared surface is increased.
摘要:
A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
摘要:
A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapor deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.