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公开(公告)号：US08890091B2
公开(公告)日：2014-11-18
申请号：US13698644
申请日：2011-06-01
CPC分类号： C09K3/14 , B24D18/00 , B24D99/00 , C01B32/28 , C09K3/1409 , C23C14/0611 , C23C14/48 , C30B29/04 , C30B33/04
摘要： A method comprising: selecting a diamond material; irradiating the diamond material to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the diamond material is selected from the group consisting of: a HPHT diamond material having a total equivalent isolated nitrogen concentration in the range 1 to 600 ppm; a CVD diamond material having a total equivalent isolated nitrogen concentration in the range 0.005 to 100 ppm; and a natural diamond material having a total nitrogen concentration in the range 1 to 2000 ppm, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1×1014 to 1×1021 vacancies/cm−1.
摘要翻译： 一种方法，包括：选择金刚石材料; 照射金刚石材料以增加金刚石材料的韧性和/或耐磨性; 以及将所述金刚石材料加工成一个或多个金刚石工具片，其中所述金刚石材料选自：具有1至600ppm范围内的总当量分离氮浓度的HPHT金刚石材料; 总金属离子氮浓度在0.005〜100ppm范围内的CVD金刚石材料; 和总氮浓度在1至2000ppm范围内的天然金刚石材料，其中所述照射包括控制能量和照射剂量以向金刚石材料提供多个分离的空位缺陷，所述分离的空位点缺陷具有浓度 在1×1014到1×1021个空位/ cm-1的范围内。
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公开(公告)号：US08758509B2
公开(公告)日：2014-06-24
申请号：US14115815
申请日：2012-05-10
IPC分类号： C30B29/04
CPC分类号： H01L29/1602 , B82Y10/00 , C30B29/04 , C30B29/64 , C30B31/22 , C30B33/08 , G01N24/10 , G01R33/24 , G01R33/302 , G01R33/60 , G06N99/002 , H01L21/0405 , H01L29/157 , H01L29/167
摘要： A thin plate of synthetic single crystal diamond material, the thin plate of synthetic single crystal diamond material having: a thickness in a range 100 nm to 50 μιη; a concentration of quantum spin defects greater than 0.1 ppb (parts-per-billion); a concentration of point defects other than the quantum spin defects of below 200 ppm (parts-per-million); and wherein at least one major face of the thin plate of synthetic single crystal diamond material comprises surface termination species which have zero nuclear spin and/or zero electron spin.
摘要翻译： 合成单晶金刚石材料的薄板，合成单晶金刚石材料薄板具有：厚度在100nm至50μm的范围内; 量子自旋缺陷的浓度大于0.1ppb（十亿分之一）; 量子自旋缺陷以外的点缺陷浓度低于200ppm（百万分之一）; 并且其中所述合成单晶金刚石材料薄板的至少一个主面包括具有零核自旋和/或零电子自旋的表面终止物质。
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公开(公告)号：US20140004319A1
公开(公告)日：2014-01-02
申请号：US13994852
申请日：2011-12-16
申请人： Harpreet Kaur Dhillon , Nicholas Mattew Davies , Rizwan Uddin Ahmad Khan , Daniel James Twitchen , Philip Maurice Martineau
发明人： Harpreet Kaur Dhillon , Nicholas Mattew Davies , Rizwan Uddin Ahmad Khan , Daniel James Twitchen , Philip Maurice Martineau
IPC分类号： C01B31/06
CPC分类号： C01B31/06 , C01B32/25 , C30B25/105 , C30B29/04 , Y10T428/24802
摘要： A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions.
摘要翻译： 包括非平行位错阵列的单晶CVD合成金刚石层，其中非平行位错阵列包括形成交叉位错阵列的多个位错，如X射线地形剖面图或下图 发光条件。
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公开(公告)号：US08501143B2
公开(公告)日：2013-08-06
申请号：US12245002
申请日：2008-10-03
申请人： Geoffrey Alan Scarsbrook , Philip Maurice Martineau , John Lloyd Collins , Ricardo Simon Sussmann , Bärbel Susanne Charlotte Dorn , Andrew John Whitehead , Daniel James Twitchen
发明人： Geoffrey Alan Scarsbrook , Philip Maurice Martineau , John Lloyd Collins , Ricardo Simon Sussmann , Bärbel Susanne Charlotte Dorn , Andrew John Whitehead , Daniel James Twitchen
CPC分类号： C30B29/04 , C30B25/00 , C30B25/105 , Y10T428/263 , Y10T428/30
摘要： A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
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公开(公告)号：US20100329961A1
公开(公告)日：2010-12-30
申请号：US12823492
申请日：2010-06-25
CPC分类号： C01B32/28 , A44C17/00 , A44C17/008 , A44C17/02 , C23C16/27 , C23C16/277 , C23C16/278 , C23C16/56 , C30B25/105 , C30B29/04 , C30B31/20
摘要： Starting from a diamond material which shows a difference in its absorption characteristics after exposure to radiation with an energy of at least 5.5 eV (typically UV radiation) and thermal treatment at 798K, controlled irradiation is applied so as to introduce defects in the diamond material. After the controlled irradiation the difference in the absorption characteristics after exposure to radiation with an energy of at least 5.5 eV and thermal treatment at 798K is reduced.
摘要翻译： 从金刚石材料开始，其在暴露于辐射后具有至少5.5eV（通常为UV辐射）的能量和在798K的热处理下显示其吸收特性的差异，施加受控照射以在金刚石材料中引入缺陷。 在受控照射之后，能量至少5.5eV并且在798K下进行热处理的辐射后的吸收特性差异减小。
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公开(公告)号：US07740824B2
公开(公告)日：2010-06-22
申请号：US10717566
申请日：2003-11-21
申请人： Herman Philip Godfried , Geoffrey Alan Scarsbrook , Daniel James Twitchen , Evert Pieter Houwman , Wilhelmus Gertruda Maria Nelissen , Andrew John Whitehead , Clive Edward Hall , Philip Maurice Martineau
发明人： Herman Philip Godfried , Geoffrey Alan Scarsbrook , Daniel James Twitchen , Evert Pieter Houwman , Wilhelmus Gertruda Maria Nelissen , Andrew John Whitehead , Clive Edward Hall , Philip Maurice Martineau
IPC分类号： C01B31/06
CPC分类号： C30B29/04 , C01B32/25 , C01P2006/60 , C01P2006/80 , C30B9/00 , C30B19/02 , C30B25/02 , C30B25/165 , C30B25/20 , C30B25/205 , C30B33/02 , C30B33/12 , G02B1/002 , G02B1/02
摘要： A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.
摘要翻译： 适用于光学元件或元件的CVD单晶金刚石材料。 它适用于各种各样的光学应用，例如光学窗口，激光窗口，光反射器，光折射器和光栅以及标准具。 CVD金刚石材料通过CVD方法在受控低水平的氮气存在下产生，以控制晶体缺陷的发展，从而获得具有光学应用关键特性的金刚石材料。
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公开(公告)号：US20090175777A1
公开(公告)日：2009-07-09
申请号：US12245002
申请日：2008-10-03
申请人： Geoffrey Alan SCARSBROOK , Philip Maurice Martineau , John Lloyd Collins , Ricardo Simon Sussmann , Barbel Susanne Charlotte Dorn , Andrew John Whitehead , Daniel James Twitchen
发明人： Geoffrey Alan SCARSBROOK , Philip Maurice Martineau , John Lloyd Collins , Ricardo Simon Sussmann , Barbel Susanne Charlotte Dorn , Andrew John Whitehead , Daniel James Twitchen
CPC分类号： C30B29/04 , C30B25/00 , C30B25/105 , Y10T428/263 , Y10T428/30
摘要： A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
摘要翻译： 通过CVD制备并具有一种或多种电子特性的单晶金刚石; 使钻石适合电子应用。 还提供了制造单晶CVD金刚石的方法。
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公开(公告)号：US09416005B2
公开(公告)日：2016-08-16
申请号：US12995000
申请日：2009-07-22
CPC分类号： B82Y10/00 , G06N99/002
摘要： A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a T2 at room temperature of about 300 μs or more and wherein the host material comprises a layer of single crystal CVD diamond having a total nitrogen concentration of about 20 ppb or less, wherein the surface roughness, Rq of the single crystal diamond within an area defined by a circle of radius of about 5 μm centered on the point on the surface nearest to where the quantum spin defect is formed is about 10 nm or less, methods for preparing solid state systems and the use of single crystal diamond having a total nitrogen concentration of about 20 ppb or less in spintronic applications are described.
摘要翻译： 一种包含主体材料和量子自旋缺陷的固态系统，其中所述量子自旋缺陷在室温下具有约300μs或更大的T2，并且其中所述主体材料包括总氮浓度为 约20ppb或更小，其中在以最接近形成量子自旋缺陷的表面上的点为中心的由半径为约5μm的半径定义的区域内的单晶金刚石的表面粗糙度Rq为约10nm 描述了在自旋电子应用中制备固态体系的方法和使用总氮浓度为约20ppb或更低的单晶金刚石。
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公开(公告)号：US09017633B2
公开(公告)日：2015-04-28
申请号：US13006682
申请日：2011-01-14
IPC分类号： B01J3/06 , C03B23/00 , C03B25/00 , C30B28/12 , C30B28/14 , C30B28/06 , B32B7/02 , G11B11/105 , B32B9/00 , B32B5/16 , C30B29/04 , C30B25/02 , H01S3/094 , H01S3/16 , H01S3/30
CPC分类号： C30B29/04 , C30B25/02 , H01S3/094 , H01S3/163 , H01S3/30 , Y10T428/24942 , Y10T428/26 , Y10T428/2982 , Y10T428/30
摘要： Single crystal diamond material produced using chemical vapour deposition (CVD), and particularly diamond material having properties suitable for use in optical applications such as lasers, is disclosed. In particular, a CVD single crystal diamond material having preferred characteristics of longest linear internal dimension, birefringence and absorption coefficient, when measured at room temperature, is disclosed. Uses of the diamond material, including in a Raman laser, and methods of producing the diamond are also disclosed.
摘要翻译： 公开了使用化学气相沉积（CVD）制造的单晶金刚石材料，特别是具有适用于诸如激光等光学应用的性质的金刚石材料。 特别地，公开了当在室温下测量时具有最长线性内尺寸，双折射和吸收系数的优选特性的CVD单晶金刚石材料。 还公开了包括在拉曼激光中的金刚石材料的使用，以及生产金刚石的方法。
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公开(公告)号：US09017632B2
公开(公告)日：2015-04-28
申请号：US12823576
申请日：2010-06-25
IPC分类号： B01J3/06 , A62D3/00 , C30B23/00 , H01L21/322 , C30B28/06 , C23C16/27 , C23C16/56 , C30B25/10 , C30B29/04 , C30B31/20 , A44C17/00
CPC分类号： C01B32/28 , A44C17/00 , A44C17/008 , A44C17/02 , C23C16/27 , C23C16/277 , C23C16/278 , C23C16/56 , C30B25/105 , C30B29/04 , C30B31/20
摘要： A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process with electrons to introduce isolated vacancies into the diamond material, the irradiated diamond material having (or after a further post-irradiation treatment having) a total vacancy concentration [VT] and a path length L such that [VT]×L is at least 0.072 ppm cm and at most 0.36 ppm cm, and the diamond material becomes fancy pale blue or fancy pale blue/green in color. Fancy pale blue diamonds are also described.
摘要翻译： 描述了制作花式浅蓝色或花式浅蓝/绿色CVD金刚石材料的方法。 该方法包括用电子照射通过CVD工艺生长的单晶金刚石材料，以将分离的空位引入金刚石材料中，所照射的金刚石材料具有（或在进一步的后照射处理后）具有总空位浓度[VT] 以及路径长度L，使[VT]×L为至少0.072ppmcm，最大为0.36ppmcm，金刚石材料呈现为浅蓝色或浅蓝色/绿色。 还描述了迷人的淡蓝色钻石。
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