发明授权
- 专利标题： Memory cell having closed curve structure
- 专利标题（中）： 存储单元具有闭合曲线结构
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申请号： US14000620申请日： 2011-03-15
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公开(公告)号： US09524780B2公开(公告)日： 2016-12-20
- 发明人: Reynaldo V Villavelez , Paul I. Mikulan
- 申请人： Reynaldo V Villavelez , Paul I. Mikulan
- 申请人地址： US TX Houston
- 专利权人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- 当前专利权人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- 当前专利权人地址： US TX Houston
- 代理机构： Dicke, Billig & Czaja PLLC
- 国际申请： PCT/US2011/028537 WO 20110315
- 国际公布： WO2012/125162 WO 20120920
- 主分类号： G11C5/06
- IPC分类号： G11C5/06 ; G11C16/10 ; H01L21/28 ; H01L27/115 ; H01L29/788 ; H01L29/423 ; H01L29/66 ; H01L29/06
摘要：
A memory cell including a drain, a channel, and a floating gate. The channel surrounds the drain and includes a first rounded closed curve structure around the drain. The floating gate is situated over the channel and includes a second rounded closed curve structure over the channel.
公开/授权文献
- US20130329498A1 MEMORY CELL HAVING CLOSED CURVE STRUCTURE 公开/授权日：2013-12-12
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